Electronic Design

Low-Side 9-A Gate Driver Has Separate Source and Sink Outputs

The right gate driver enables a SiC or IGBT device to realize its performance potential in automotive applications.
Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.
New Electronics

Toshiba introduces 80V N-Channel MOSFET for industrial power applications

Toshiba Electronics unveils new 80V N-channel power MOSFET designed to improve efficiency in industrial power systems.
Semiconductor Engineering

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)

A new technical paper titled “Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts” was published by researchers at National Yang Ming Chiao Tung University. “This ...