Electronic Design

RF Power Amplifier Testing

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.
EDN

RF power transistors are based on LDMOS

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
Electronic Design

RF Power Transistor Family Claimed As Industry’s Coolest

Wireless base station power amplifier manufacturers, including 2G, 2.5G and 3G OEMs, represent the primary market targeted by a new family of power transistors that is said to deliver about a 10% ...
EDN

RF GaN-on-Si transistor sets new performance benchmark

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Hosted on MSN

Low-power, flexible radio-frequency transistors break 100 GHz barrier

Over the past decades, electronics engineers worldwide have been trying to develop devices that could enable even faster communications between devices, all while consuming less energy. To meet the ...